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NBB-500
0
RoHS Compliant & Pb-Free Product Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated Amplifiers Product Description
The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-500 provides flexibility and stability. The NBB-500 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for highvolume tape-and-reel requirements. It is available in either packaged or chip (NBB-500-D) form, where its gold metallization is ideal for hybrid circuit designs.
45
0.055 (1.40)
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz
* Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
UNITS: Inches (mm)
N5
0.040 (1.02) 0.070 (1.78)
0.020 0.200 sq. (5.08) 0.005 (0.13)
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: Micro-X, 4-Pin, Ceramic
Features * Reliable, Low-Cost HBT Design * 19.0dB Gain, +12.3dBm P1dB@2GHz * High P1dB of +14.0dBm@6.0GHz
GND 4 MARKING - N5
* Single Power Supply Operation * 50 I/O Matched for High Freq. Use
RF IN 1
3 RF OUT
Ordering Information
2 GND Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-500-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively) NBB-500-D NBB-500 Chip Form (100 pieces minimum order) NBB-500-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer's Tool Kit RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NBB-500
Functional Block Diagram
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Absolute Maximum Ratings Parameter
RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature
Rating
+20 300 70 200 -45 to +85 -65 to +150
Unit
dBm mW mA C C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Specification Min. Typ. Max.
19.0 16.0 20.5 19.5 18.5 0.8 1.70:1 1.45:1 1.65:1 4.2 12.3 14.0 3.2 +26.5 -17.0 3.9 -0.0015
Unit
dB dB dB dB
Condition
VD =+3.9V, ICC =35mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz f=2.0GHz to 4.0GHz f=0.1GHz to 3.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz BW3 (3dB) f=2.0GHz f=6.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 10.0GHz
Gain Flatness, GF Input and Output VSWR
Bandwidth, BW Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T
GHz dBm dBm dB dBm dB V dB/C
3.6
4.2
MTTF versus Temperature @ ICC =35mA
Case Temperature Junction Temperature MTTF 85 120 >1,000,000 256 C C hours C/W
Thermal Resistance
JC
J T - T CASE -------------------------- = JC ( C Watt ) V D I CC
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Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
2 3
GND RF OUT
RF OUT
( V CC - V DEVICE ) R = -----------------------------------------I CC
RF IN
4
GND
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2.
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NBB-500
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC RCC
4 In 1 C block 2 3
L choke
(optional)
Out C block VDEVICE VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V) Bias Resistor, RCC () 5 31 8 117 10 174 12 231 15 317 20 460
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Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017" x 0.017" x 0.004"
UNITS: Inches (mm)
Back of chip is ground.
OUTPUT
INPUT
0.017 0.001 (0.44 0.03)
GND VIA
0.017 0.001 (0.44 0.03)
0.004 0.001 (0.10 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information * All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be negotiated on a case-by-case basis. * Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product Final Visual Inspection Criteria1. * Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allowable. Die Packaging * All die are packaged in GelPak ESD protective containers with the following specification: O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X8). * GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2. Package Storage * Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2. Die Handling * Proper ESD precautions must be taken when handling die material. * Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of tweezers. Do not touch die with any part of the body. * When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force may damage GaAs devices.
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NBB-500
Die Attach * The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the thermal path by which heat can leave the chip. * Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. * All connections should be made on the topside of the die. It is essential to performance that the backside be well grounded and that the length of topside interconnects be minimized. * Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out on the topside. Die Wire Bonding * Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. * All bond wires should be made as short as possible. Notes
1 RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die inspection personnel to determine final visual acceptance of die product prior to shipping to customers.
takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discretion of RFMD.
2RFMD
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Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation
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NBB-500
Tape and Reel Dimensions
All Dimensions in Millimeters
T A B D O S
F
330 mm (13") REEL ITEMS SYMBOL Diameter FLANGE Thickness Space Between Flange Outer Diameter HUB Spindle Hole Diameter Key Slit Width Key Slit Diameter B T F O S A D Micro-X, MPGA SIZE (mm) SIZE (inches) 330 +0.25/-4.0 18.4 MAX 12.4 +2.0 102.0 REF 13.0 +0.079/-0.158 0.724 MAX 0.488 +0.08 4.0 REF
13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 0.059 MIN 20.2 MIN 0.795 MIN
LEAD 1
User Direction of Feed
All dimensions in mm
4.0 2.00 0.05
SEE NOTE 6 SEE NOTE 1
0.30 0.05 R0.3 MAX.
5.0
+0.1 -0.0
A
1.75
B1
5.0 MIN. B1 Bo
5.50 0.05
SEE NOTE 6
12.0 0.3
Ko SECTION A-A
2.5 Ao
A1
8.0
A
R0.3 TYP.
NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
Ao = 7.0 MM A1 = 1.45 MM Bo = 7.0 MM B1 = 0.9 MM Ko = 2.0 MM
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Device Voltage versus Amplifier Current
4.00 20.0 18.0 16.0
P1dB versus Frequency at 25C
Device Voltage, V D (V)
14.0 3.95
P1dB (dBm)
3.90 3.85 20.00 25.00 30.00 35.00 40.00 45.00 50.00
12.0 10.0 8.0 6.0 4.0 2.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Amplifier Current, ICC (mA)
Frequency (GHz)
POUT/Gain versus PIN at 2 GHz
25.0 18.0 16.0 20.0 14.0
POUT/Gain versus PIN at 6 GHz
POUT (dBm), Gain (dB)
POUT (dBm), Gain (dB)
Pout (dBm) Gain (dB)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 Pout (dBm) Gain (dB)
15.0
10.0
5.0
0.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
PIN (dBm)
PIN (dBm)
Third Order Intercept versus Frequency at 25C
30.0
25.0
Output IP3 (dBm)
20.0
15.0
10.0
5.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
Rev A5 050414
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NBB-500
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
0.0 0.0
S12 versus Frequency, Over Temperature
-5.0
-5.0
-10.0
-10.0
-15.0
-15.0
S11 (dB)
-20.0
S12 (dB)
+25 C -40 C +85 C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-20.0
-25.0
-25.0
-30.0
-30.0 +25 C -40 C +85 C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-35.0
-35.0
-40.0
-40.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency, Over Temperature
30.0 0.0
S22 versus Frequency, Over Temperature
20.0
-5.0
-10.0 10.0 -15.0
S21 (dB)
S22 (dB)
0.0
-20.0
-10.0
-25.0 -20.0 -30.0 -30.0 +25 C -40 C +85 C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 +25 C -35.0 -40 C +85 C -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-40.0
Frequency (GHz)
Frequency (GHz)
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